IRG7PH35UD-EP International Rectifier, IRG7PH35UD-EP Datasheet - Page 6

• Manufacturer Part Number: IRG7PH35UD-EP
• Description: 1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
• Manufacturer: International Rectifier

Specifications of IRG7PH35UD-EP

• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 2.80
• Pd @25c (w): 180
• Environmental Options: PbF

IRG7PH35UDPbF/IRG7PH35UD-EP
6
V
2000
1500
1000
CC
500
60
50
40
30
20
10
55
50
45
40
35
30
25
20
0
= 600V; V
200
10
10
Fig. 20 - Typ. Diode I
Fig. 18 - Typ. Diode I
R G = 5.0 Ω
R G = 10 Ω
R G = 47Ω
R G = 100Ω
400
Fig. 22 - Typ. Diode E
15
15
R G = 5.0Ω
R G = 10Ω
R G = 47Ω
R G = 100Ω
GE
600
T
J
20
= 15V; I
20
= 150°C
di F /dt (A/µs)
800 1000 1200 1400 1600
T
I F (A)
J
I F (A)
25
= 150°C
25
F
= 20A; T
RR
RR
30
30
vs. di
vs. I
RR
F
35
F
J
35
vs. I
/dt
= 150°C
F
40
40
6000
5000
4000
3000
2000
1000
5.0
4.0
3.0
2.0
1.0
50
45
40
35
30
25
20
0
V
Fig. 21 - Typ. Diode Q
25
Fig. 19 - Typ. Diode I
0
0
CC
Fig. 23 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
100Ω
200 400 600 800 10001200140016001800
= 600V; V
50
20
T J , Temperature (°C)
T
J
47Ω
40A
75
= 150°C
GE
di F /dt (A/µs)
40
R G (Ω)
10A
= 15V; T
20A
100
60
RR
10Ω
RR
125
vs. R
vs. di
J
I C = 600µA
= 150°C
80
150
5.0Ω
G
F
/dt
www.irf.com
175
100