IRG7PH35UD-EP International Rectifier, IRG7PH35UD-EP Datasheet - Page 4

• Manufacturer Part Number: IRG7PH35UD-EP
• Description: 1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
• Manufacturer: International Rectifier

Specifications of IRG7PH35UD-EP

• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 2.80
• Pd @25c (w): 180
• Environmental Options: PbF

IRG7PH35UDPbF/IRG7PH35UD-EP
4
Fig. 8 - Typ. IGBT Output Characteristics
Fig. 6- Typ. IGBT Output Characteristics
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
8
7
6
5
4
3
2
1
0
0
4
Fig. 10 - Typical V
T
T
J
J
= 150°C; tp = 30µs
2
2
= -40°C; tp = 30µs
8
T
J
= -40°C
4
4
V CE (V)
V CE (V)
V GE (V)
12
I CE = 10A
I CE = 20A
I CE = 40A
CE
6
6
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
vs. V
16
8
8
GE
10
10
20
Fig. 9 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
8
7
6
5
4
3
2
1
0
0
5
Fig. 11 - Typical V
1
T
150°C
-40°C
2
25°C
J
= 25°C; tp = 30µs
tp = 380µs
10
2
T
4
J
V CE (V)
V GE (V)
= 25°C
V F (V)
3
I CE = 10A
I CE = 20A
I CE = 40A
6
CE
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
15
4
vs. V
8
5
GE
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10
20
6