IRG7PH35UD-EP International Rectifier, IRG7PH35UD-EP Datasheet - Page 5

• Manufacturer Part Number: IRG7PH35UD-EP
• Description: 1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
• Manufacturer: International Rectifier

Specifications of IRG7PH35UD-EP

• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 2.80
• Pd @25c (w): 180
• Environmental Options: PbF

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T
J
T
= 150°C; L = 680µH; V
J
= 150°C; L = 680µH; V
3500
3000
2500
2000
1500
1000
4000
3000
2000
1000
500
8
7
6
5
4
3
2
1
0
Fig. 16 - Typ. Energy Loss vs. R
0
5
0
Fig. 14 - Typ. Energy Loss vs. I
Fig. 12 - Typical V
20
10
T
10
J
CE
= 150°C
CE
40
R G (Ω)
= 600V, I
V GE (V)
= 600V, R
E ON
I C (A)
20
I CE = 10A
I CE = 20A
I CE = 40A
CE
60
E ON
E OFF
vs. V
15
CE
G
= 10Ω; V
= 20A; V
30
80
GE
E OFF
C
G
IRG7PH35UDPbF/IRG7PH35UD-EP
100
GE
20
GE
40
= 15V
= 15V
T
J
T
= 150°C; L = 680µH; V
J
= 150°C; L = 680µH; V
10000
1000
1000
100
100
80
70
60
50
40
30
20
10
10
10
Fig. 17 - Typ. Switching Time vs. R
0
Fig. 13 - Typ. Transfer Characteristics
1
Fig. 15 - Typ. Switching Time vs. I
4
0
0
t R
td ON
td ON
t F
td OFF
V GE, Gate-to-Emitter Voltage (V)
t R
V
5
20
CE
10
T J = 150°C
= 50V, tp = 30µs
6
CE
CE
40
= 600V, I
= 600V, R
R G (Ω)
td OFF
t F
I C (A)
7
20
60
T J = 25°C
8
CE
G
= 10Ω; V
= 20A; V
30
80
9
C
G
GE
100
10
GE
= 15V
40
= 15V
5