ST10F273Z4 STMicroelectronics, ST10F273Z4 Datasheet - Page 133

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ST10F273Z4

Manufacturer Part Number
ST10F273Z4
Description
16-BIT MICROCONTROLLER WITH MAC UNIT, UP TO 832 KBYTES FLASH MEMORY AND UP TO 68 KBYTES RAM
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST10F273Z4

Single Voltage Supply
5 V ±10%

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ST10F273Z4
24.6
Flash characteristics
V
Table 66.
1. The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2. Word and Double Word Programming times are provided as average values derived from a full sector
3. Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the
4. Not 100% tested, guaranteed by Design Characterization
Word program (32-bit)
Double word program
(64-bit)
Bank 0 program (384K)
(double word program)
Bank 1 program (128K)
(double word program)
Sector erase (8K)
Sector erase (32K)
Sector erase (64K)
Bank 0 erase (384K)
Bank 1 erase (128K)
Recovery from power-down
(t
Program suspend latency
Erase suspend latency
Erase suspend request rate
Set protection
DD
PD
programming time: absolute value of a Word or Double Word Programming time could be longer than the
average value.
Bank). As ST10F273Z4 implements only one bank, the Bank Erase operation is equivalent to Module and
Chip Erase operations.
= 5 V ± 10%, V
)
(2)
Parameter
Flash characteristics
(4)
SS
(3)
(3)
(2)
(4)
= 0 V
(4)
(4)
0 cycles
T
Typical
A
= 25°C
2.9
1.0
0.6
0.5
1.1
0.8
1.7
1.3
8.2
5.8
3.0
2.2
35
60
20
40
-
-
-
(1)
0 cycles
20.2
17.7
150
170
7.4
2.5
0.9
0.8
2.0
1.8
3.7
3.3
7.0
6.2
80
40
10
30
20
T
Maximum
A
(1)
= 125°C
cycles
100k
28.0
28.6
26.1
290
570
170
9.3
1.0
0.9
2.7
2.5
5.1
4.7
9.8
9.0
40
10
30
20
Unit
ms
µs
µs
µs
µs
µs
µs
Electrical characteristics
s
s
s
s
s
s
s
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
(4)
Minimum delay
between 2 requests
Notes
133/188

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