BLF6G20S-45 NXP Semiconductors, BLF6G20S-45 Datasheet - Page 2

• Manufacturer Part Number: BLF6G20S-45
• Description: 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G20-45_BLF6G20S-45_2
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G20-45 (SOT608A)
1
2
3
BLF6G20S-45 (SOT608B)
1
2
3
Type number
BLF6G20-45
BLF6G20S-45
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
-
Rev. 02 — 25 August 2008
Description
flanged ceramic package; 2 mounting holes; 2 leads
ceramic earless flanged package; 2 leads
BLF6G20-45; BLF6G20S-45
Conditions
[1]
[1]
Simplified outline
1
2
1
2
3
Power LDMOS transistor
3
Graphic symbol
Min
-
-
-
© NXP B.V. 2008. All rights reserved.
0.5
65
2
2
Max
65
+13
13
+150
225
sym112
sym112
Version
SOT608A
SOT608B
1
3
1
3
2 of 12
Unit
V
V
A
C
C