BLF6G20S-45 NXP Semiconductors, BLF6G20S-45 Datasheet - Page 10

45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz

BLF6G20S-45

Manufacturer Part Number
BLF6G20S-45
Description
45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz
Manufacturer
NXP Semiconductors
Datasheet

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10. Abbreviations
11. Revision history
Table 10.
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Document ID
BLF6G20-45_BLF6G20S-45_2 20080825
Modifications:
BLF6G20-45_1
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
IMD
LDMOS
PAR
PDPCH
RF
VSWR
W-CDMA
Release date
20060220
Abbreviations
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP semiconductors.
Legal texts have been adapted to the new company name where appropriate.
The document now describes both the eared and earless version of this product:
BLF6G20-45 and BLF6G20S-45 respectively.
Rev. 02 — 25 August 2008
Data sheet status
Product data sheet
Objective data sheet -
Wideband Code Division Multiple Access
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
InterModulation Distortion
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
BLF6G20-45; BLF6G20S-45
Change notice
-
Supersedes
BLF6G20-45_1
-
Power LDMOS transistor
© NXP B.V. 2008. All rights reserved.
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