PSMN1R5-40ES NXP Semiconductors, PSMN1R5-40ES Datasheet - Page 7

• Manufacturer Part Number: PSMN1R5-40ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R5-40ES
Product data sheet
Fig 7.
Fig 9.
18000
14000
10000
(pF)
R
(m Ω )
6000
2000
C
DSon
8
6
4
2
0
of gate-source voltage; typical values.
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Input and reverse transfer capacitances as a
4
1
8
12
10
C
C
V
iss
rss
16
GS
All information provided in this document is subject to legal disclaimers.
(V)
V
003aaf320
003aaf318
GS
(V)
10
20
Rev. 01 — 19 April 2011
2
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
80
60
40
20
5
4
3
2
1
0
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
0
20
6.0
0.25
5.2
0
PSMN1R5-40ES
5.0
0.5
60
max
min
typ
0.75
120
V
GS
© NXP B.V. 2011. All rights reserved.
003aaf319
V
003aad280
T
(V) = 4.8
DS
j
(°C)
(V)
4.7
4.6
4.5
180
1
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