PSMN1R5-40ES NXP Semiconductors, PSMN1R5-40ES Datasheet - Page 4

PSMN1R5-40ES

Manufacturer Part Number
PSMN1R5-40ES
Description
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN1R5-40ES
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
single shot
0.05
0.02
0.2
0.1
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 01 — 19 April 2011
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
Conditions
see
Vertical in free air
10
-3
Figure 4
10
-2
PSMN1R5-40ES
Min
-
-
10
P
-1
Typ
0.22
60
tp
T
t
© NXP B.V. 2011. All rights reserved.
p
(s)
003aaf327
δ =
Max
0.44
-
tp
T
t
1
Unit
K/W
K/W
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