PSMN1R5-40ES NXP Semiconductors, PSMN1R5-40ES Datasheet - Page 6

• Manufacturer Part Number: PSMN1R5-40ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
PSMN1R5-40ES
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Measured 3 mm from package.
(S)
g
200
150
100
fs
50
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
15
…continued
30
45
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003aaf316
I
D
(A)
60
Conditions
I
see
I
V
I
V
S
S
S
Rev. 01 — 19 April 2011
GS
GS
= 25 A; V
= 25 A; dI
= 25 A; dI
Figure 17
= 0 V; V
= 0 V; V
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
GS
S
S
DS
DS
/dt = -100 A/µs;
/dt = -100 A/µs;
Fig 6.
= 0 V; T
= 20 V
= 20 V; T
(A)
I
D
75
60
45
30
15
0
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
j
0
= 25 °C;
j
= 25 °C
2
PSMN1R5-40ES
T
j
= 175 ° C
Min
-
-
-
4
Typ
0.8
64
117
V
© NXP B.V. 2011. All rights reserved.
T
GS
003aaf317
j
= 25 ° C
(V)
Max
1.2
-
-
6
Unit
V
ns
nC
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