PSMN010-25YLC NXP Semiconductors, PSMN010-25YLC Datasheet - Page 7

• Manufacturer Part Number: PSMN010-25YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN010-25YLC
Product data sheet
Symbol
t
t
t
t
Q
Source-drain diode
V
t
Q
t
t
d(on)
r
d(off)
f
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
40
30
20
10
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise
time
reverse recovery fall
time
10
4.5
3.5
1
N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology
…continued
2
V
3
GS
Conditions
V
R
V
I
see
I
V
V
V
All information provided in this document is subject to legal disclaimers.
S
S
003aag234
DS
GS
DS
GS
DS
G(ext)
(V) = 3.0
V
= 10 A; V
= 10 A; dI
DS
Figure 17
= 12 V; R
= 12 V
= 12 V; see
= 0 V; V
= 0 V; I
(V)
2.8
2.6
2.2
2.4
= 4.7 Ω
Rev. 2 — 25 October 2011
4
S
GS
S
DS
/dt = -100 A/µs; V
= 10 A; dI
L
= 0 V; T
= 0.6 Ω; V
= 12 V; f = 1 MHz
Figure 18
Fig 7.
j
S
= 25 °C;
/dt = -100 A/µs;
R
(mΩ)
GS
DSon
40
30
20
10
= 4.5 V;
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
GS
0
= 0 V;
4
PSMN010-25YLC
8
Min
-
-
-
-
-
-
-
-
-
-
12
Typ
10.7
9.8
11.5
4.2
3.9
0.85
15.1
4.8
8.8
6.3
© NXP B.V. 2011. All rights reserved.
16
003aag235
V
GS
Max
-
-
-
-
-
1.1
-
-
-
-
(V)
20
Unit
ns
ns
ns
ns
nC
V
ns
nC
ns
ns
7 of 15