PSMN010-25YLC NXP Semiconductors, PSMN010-25YLC Datasheet - Page 3

• Manufacturer Part Number: PSMN010-25YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN010-25YLC
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
ESD
DS(AL)S
(A)
I
D
40
30
20
10
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
50
N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology
100
150
All information provided in this document is subject to legal disclaimers.
003aag230
T
mb
( ° C)
200
Rev. 2 — 25 October 2011
MM (JEDEC JESD22-A115)
Conditions
25 °C ≤ T
25 °C ≤ T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
see
mb
mb
GS
GS
GS
sup
Figure 4
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 25 V; unclamped; R
p
p
j
j
≤ 10 µs; T
≤ 10 µs; T
≤ 175 °C
≤ 175 °C; R
Fig 2.
mb
mb
j(init)
= 25 °C; see
= 100 °C; see
P
Figure 2
(%)
= 25 °C; I
der
120
80
40
mb
mb
0
function of mounting base temperature
Normalized total power dissipation as a
GS
0
= 25 °C;
= 25 °C
= 20 kΩ
GS
D
= 39 A;
= 50 Ω;
Figure 1
Figure 1
50
PSMN010-25YLC
100
Min
-
-
-20
-
-
-
-
-55
-55
-
110
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
-
Max
25
25
20
39
28
158
30
260
27
158
9
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
V
A
A
mJ
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