PMDPB65UP NXP Semiconductors, PMDPB65UP Datasheet - Page 6

• Manufacturer Part Number: PMDPB65UP
• Description: Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
PMDPB65UP
Product data sheet
Symbol
Static characteristics (per transistor)
V
V
I
I
R
g
Dynamic characteristics (per transistor)
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode (per transistor)
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
forward
Conditions
I
I
V
V
V
V
V
δ ≤ 0.01 ; T
V
t
V
δ ≤ 0.01 ; T
V
δ ≤ 0.01 ; T
V
t
I
T
V
T
V
R
I
All information provided in this document is subject to legal disclaimers.
D
D
p
p
D
S
j
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
G(ext)
≤ 300 µs; δ ≤ 0.01 ; T
≤ 300 µs; δ ≤ 0.01 ; T
= 25 °C
= 25 °C
= -1.3 A; V
= -250 µA; V
= -250 µA; V
= -3.3 A; V
= -20 V; V
= -20 V; V
= -5 V; I
= -15 V; R
= 8 V; V
= -8 V; V
= -4.5 V; I
= -4.5 V; I
= -2.5 V; I
= -1.8 V; I
= 0 V; V
= 6 Ω; T
Rev. 2 — 8 March 2011
j
j
j
= 25 °C
= 25 °C
= 25 °C
D
DS
DS
GS
DS
DS
D
D
D
D
= -1 A; pulsed;
GS
GS
L
j
GS
DS
= 0 V; T
= -10 V; f = 1 MHz;
= -10 V; V
= 25 °C
= -1 A; t
= -1 A; pulsed;
= -1 A; t
= -0.5 A; t
= 15 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
GS
j
j
j
; T
j
j
p
p
= 25 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
j
j
≤ 300 µs;
≤ 300 µs;
GS
j
p
GS
= 25 °C
= 150 °C
j
= 25 °C
= 25 °C
≤ 300 µs;
= -8 V;
= -4.5 V;
20 V, 3.5 A dual P-channel Trench MOSFET
Min
-20
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMDPB65UP
Typ
-
-0.7
-
-
1
-1
58
80
72
100
8
4.5
0.8
1
380
72
61
5
10
57
35
-0.75
© NXP B.V. 2011. All rights reserved.
-
Max
-
-1
-1
-10
10
-10
70
100
90
150
-
6
-
-
-
-
-
-
-
-
-1
Unit
V
V
µA
µA
µA
µA
mΩ
mΩ
mΩ
mΩ
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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