PMDPB65UP NXP Semiconductors, PMDPB65UP Datasheet - Page 10

• Manufacturer Part Number: PMDPB65UP
• Description: Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Package outline
Fig 17. Package outline SOT1118 (HUSON6)
PMDPB65UP
Product data sheet
HUSON6: plastic, thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
Dimensions
Note
1. Dimension including plating thickness.
mm
SOT1118
Unit
Outline
version
max
nom
min
0.65 0.04
A
(1)
terminal 1
index area
A
1
terminal 1
index area
L
E
0.35
0.25
p
1
b
IEC
p
2.1
1.9
D
1
6
0.77
0.57
D
1
e
e
1
2.1
1.9
JEDEC
E
D
All information provided in this document is subject to legal disclaimers.
- - -
1.1
0.9
0
E
1
References
D
b
1
3
4
p
0.65
Rev. 2 — 8 March 2011
e
0.54
0.44
e
v
1
JEITA
B
scale
0.3
0.2
L
A
1
p
A
E
B
0.1
v
0.05
A
y
20 V, 3.5 A dual P-channel Trench MOSFET
A
1
0.05
y
1
y
(8×)
1
2 mm
C
detail X
European
projection
PMDPB65UP
C
X
y
© NXP B.V. 2011. All rights reserved.
Issue date
10-08-03
10-08-16
sot1118_po
SOT1118
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