PMDPB65UP NXP Semiconductors, PMDPB65UP Datasheet - Page 5

• Manufacturer Part Number: PMDPB65UP
• Description: Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMDPB65UP
Product data sheet
Fig 4.
Fig 5.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
−3
duty cycle = 1
duty cycle = 1
0.25
0.25
0.5
0.1
0.5
0.1
0
0
0.75
0.33
0.05
0.02
0.01
0.75
0.33
0.05
0.02
0.01
0.2
0.2
10
10
−2
−2
All information provided in this document is subject to legal disclaimers.
10
10
−1
−1
2
Rev. 2 — 8 March 2011
1
1
20 V, 3.5 A dual P-channel Trench MOSFET
10
10
PMDPB65UP
10
10
2
2
t
t
p
p
© NXP B.V. 2011. All rights reserved.
(s)
(s)
017aaa067
017aaa068
10
10
3
3
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