BT131W-600 NXP Semiconductors, BT131W-600 Datasheet - Page 4

• Manufacturer Part Number: BT131W-600
• Description: Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
January 2004
P tot
Triacs
logic level
(W)
Fig.1. Maximum on-state dissipation, P
on-state current, I
0.8
0.6
0.4
0.2
I TSM
0
(A)
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
1
I TSM
0
(A)
on-state current I
10 2
10 3
12
14
10
6
2
8
4
0
10
1
10 -5
α
α
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
T2- G+ quadrant
10 -4
dI T /dt limit
0.4
T(RMS)
TSM
10
TSM
, versus number of cycles, for
, where α = conduction angle.
, versus pulse width t
10 -3
I
p
T
0.8
T j initial = 25 °C max
I T
≤ 20ms.
10 2
T j initial = 25 °C max
Number of cycles at 50Hz
t p
10 -2
I T(RMS) (A)
T
tot
, versus rms
120 °
α = 180 °
90 °
60 °
30 °
t p (S)
I TSM
time
p
I TSM
, for
time
1.2
10 -1
T sp (max)
122
125
110
113
119
116
10 3
(°C)
3
I T(RMS)
Fig.5. Maximum permissible repetitive rms on-state
(A)
current I
V
Fig.4. Maximum permissible rms current I
0.2
1.2
0.8
0.4
0.6
GT
1
0
2.5
2.0
1.5
0.5
1.6
1.4
1.2
0.8
0.6
0.4
-50
(T
3
1
0
0.01
1
-50
IT(RMS) / A
VGT(25 C)
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
versus solder point temperature T
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
Tj / C
50
50
lead
BT131W series
Product specification
1
≤ 110˚C.
100
100
sp
T lead (°C)
.
Rev 2.000
110 °C
T(RMS)
150
10
,
j
.
150