BT131W-600 NXP Semiconductors, BT131W-600 Datasheet - Page 2

Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance

BT131W-600

Manufacturer Part Number
BT131W-600
Description
Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT131W-600
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1;3 Semiconductors
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a
plastic envelope suitable for surface
mounting, intended for use in general
purpose bidirectional switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
January 2004
Triacs
logic level
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
DRM
t
GM
GM
G(AV)
stg
j
tab
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
T(RMS)
TSM
G
DRM
/dt = 0.2 A/μs
= 1.5 A; I
G
1
PARAMETER
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
= 0.2 A;
1
sp
j
= 25 ˚C prior to
≤ 110 ˚C
2
4
T2+ G+
T2+ G-
T2- G-
T2- G+
3
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
BT131W-
T2
-500
500
1
Product specification
MAX.
BT131W series
12.5
13.8
150
125
0.5
0.5
50
50
50
10
MAX. MAX. UNIT
12.5
1
2
5
5
500
500
1
-600
600
12.5
1
600
600
1
Rev 2.000
UNIT
G
A/μs
A/μs
A/μs
A/μs
T1
A
W
W
˚C
˚C
V
A
A
A
A
V
2
V
A
A
s

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