BT131W-600 NXP Semiconductors, BT131W-600 Datasheet - Page 3

• Manufacturer Part Number: BT131W-600
• Description: Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
January 2004
Triacs
logic level
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-sp
th j-a
D
com
/dt
/dt
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:14
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; R
V
dI
I
dI
T
TM
D
D
D
D
D
D
DM
DM
com
G
= 1.4 A
/dt = 5 A/μs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 1.5 A; V
= 67% V
= 400 V; T
/dt = 0.5 A/ms
DRM(max)
T
GT
GT
T
T
DRM(max)
= 0.1 A
= 0.1 A
; T
D
= 0.1 A
= 0.1 A
= 0.1 A; T
j
= V
j
= 125 ˚C;
2
= 125 ˚C
DRM(max)
; T
j
= 125 ˚C;
j
GK
; I
= 125 ˚C
G
= 1 kΩ
= 0.1 A;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
MIN.
MIN.
0.2
10
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
156
BT131W series
0.4
1.3
1.4
3.8
1.2
4.0
1.0
2.5
1.3
1.2
0.7
0.3
0.1
Product specification
70
20
2
-
-
-
MAX.
MAX.
MAX.
1.5
1.5
0.5
15
3
3
3
7
5
8
5
8
5
-
-
-
-
-
-
-
Rev 2.000
UNIT
UNIT
UNIT
V/μs
V/μs
K/W
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μs
V
V
V