BT150S-600R NXP Semiconductors, BT150S-600R Datasheet - Page 5

• Manufacturer Part Number: BT150S-600R
• Description: Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications
• Manufacturer: NXP Semiconductors

October 1997
Thyristors
logic level
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
2.5
1.5
0.5
GT
3
2
1
0
3
2
1
0
Semiconductors
3
2
1
0
-50
-50
-50
(T
IGT(25 C)
IL(25 C)
IH(25 C)
IGT(Tj)
IL(Tj)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT148
BT145
BT145
Tj / C
Tj / C
Tj / C
50
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
100
12
10
0.01
10
8
6
4
2
0
0.1
10
1
0
10us
IT / A
1
0
dVD/dt (V/us)
Rs = 0.099 ohms
dV
Tj = 125 C
Zth j-mb (K/W)
Vo = 1.26 V
Tj = 25 C
D
/dt versus junction temperature T
0.5
0.1ms
pulse width t
1ms
1
50
BT148
tp / s
VT / V
BT148
10ms
Tj / C
1.5
typ
P
D
p
0.1s
BT150S series
.
Product specification
100
2
t
p
RGK = 100 ohms
BT150M series
max
1s
2.5
th j-mb
t
Rev 1.100
, versus
j
.
10s
150
3