BT150S-600R /T3 NXP Semiconductors, BT150S-600R /T3 Datasheet

SCRs TAPE13 SCR

BT150S-600R /T3

Manufacturer Part Number
BT150S-600R /T3
Description
SCRs TAPE13 SCR
Manufacturer
NXP Semiconductors
Datasheet
1.BT150S-600R_T3.pdf (6 pages)

Specifications of BT150S-600R /T3

Breakover Current Ibo Max
38 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.8 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
6 mA
Mounting Style
SMD/SMT
Package / Case
SOT-428
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT150S-600R,118
Philips Semiconductors
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
suitable
intended for use in general purpose
switching
applications. These devices are
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
PINNING - SOT428
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.
October 1997
Thyristors
logic level
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
V
P
P
T
T
NUMBER
T(AV)
T(RMS)
TSM
2
GM
t
stg
j
DRM
GM
RGM
GM
G(AV)
T
/dt
PIN
tab
1
2
3
, V
RRM
for
and
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
Standard Alternative
2
cathode
t for fusing
anode
anode
gate
surface
S
logic
phase
integrated
cathode
mounting,
anode
anode
gate
control
M
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
I
RRM
T(AV)
T(RMS)
TSM
G
DRM
/dt = 50 mA/ s
= 10 A; I
,
G
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
= 50 mA;
1
1
tab
2
mb
j
= 25 ˚C prior to
BT150S (or BT150M)-
3
111 ˚C
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
-500R -600R -800R
a
500
MAX. MAX. MAX. UNIT
500R
500
2.5
35
Product specification
4
1
MAX.
600
125
BT150S series
150
2.5
6.1
0.5
35
38
50
600R
4
2
5
5
5
600
2.5
35
4
1
2
BT150M series
g
800
800R
800
2.5
35
4
Rev 1.100
k
UNIT
A/ s
A
˚C
˚C
W
W
V
A
A
A
A
A
V
V
2
V
A
A
A
s

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BT150S-600R /T3 Summary of contents

Page 1

... Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed Note: Operation above 110˚C may require the use of a gate to cathode resistor less. October 1997 QUICK REFERENCE DATA SYMBOL PARAMETER BT150S (or BT150M Repetitive peak off-state DRM V voltages ...

Page 2

... DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform 100 mA DRM(max / 125 ˚ DRM(max / / Product specification BT150S series BT150M series MIN. TYP. MAX. UNIT - - 3.0 K K/W MIN. TYP. MAX. UNIT - 15 200 - 0. 0. 1.23 1 0.4 1.5 V 0.1 0 0.1 0.5 mA MIN. TYP. ...

Page 3

... C 1.4 1.2 1 0.8 0.6 0.4 100 -50 , T(RMS Product specification BT150S series BT150M series I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT150 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT150S series BT150M series BT148 typ max 0.5 1 1 BT148 0.1ms 1ms 10ms 0. versus th j-mb pulse width ...

Page 5

... Fig.13. SOT428 : centre pin connected to tab. 7.0 2.15 2.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting . 5 Product specification BT150S series BT150M series seating plane 5.4 4 min 4.6 0.5 0.3 0.5 7.0 1.5 Rev 1.100 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Product specification BT150S series BT150M series Rev 1.100 ...

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