BT150S-600R NXP Semiconductors, BT150S-600R Datasheet - Page 4

• Manufacturer Part Number: BT150S-600R
• Description: Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications
• Manufacturer: NXP Semiconductors

October 1997
Thyristors
logic level
Fig.2. Maximum permissible non-repetitive peak
Fig.1. Maximum on-state dissipation, P
6
5
4
3
2
1
0
Fig.3. Maximum permissible rms current I
1000
0
on-state current I
5
4
3
2
1
0
0
Semiconductors
Ptot / W
100
2
-50
10
IT(RMS) / A
10us
conduction
angle
degrees
versus mounting base temperature T
ITSM / A
30
60
90
120
180
average on-state current, I
T I
Tj initial = 25 C max
0.5
dI /dt limit
sinusoidal currents, t
form
factor
a = form factor = I
T
T
4
2.8
2.2
1.9
1.57
a
I TSM
0
time
4
1
100us
TSM
IF(AV) / A
, versus pulse width t
BT148
2.8
BT148Z
Tmb / C
1.5
BT148
T / s
50
2.2
T(RMS)
p
2
1ms
≤ 10ms.
1.9
T(AV)
/ I
T(AV)
100
, where
Tmb(max) / C
2.5
.
111 C
tot
a = 1.57
, versus
mb
T(RMS)
p
, for
.
10ms
3
107
110
113
116
119
122
125
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
1.6
1.4
1.2
0.8
0.6
0.4
10
30
20
40
12
10
0
1
(T
0.01
1
8
6
4
2
0
-50
ITSM / A
VGT(25 C)
IT(RMS) / A
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
10
TSM
0.1
surge duration / s
, versus number of cycles, for
BT151
BT150
Tj / C
50
mb
100
I
T
BT150S series
Product specification
Tj initial = 25 C max
1
≤ 111˚C.
T
BT150M series
100
I TSM
time
Rev 1.100
1000
150
10
j
.