M25P40-VMP6TGB Micron Technology Inc, M25P40-VMP6TGB Datasheet - Page 40

no-image

M25P40-VMP6TGB

Manufacturer Part Number
M25P40-VMP6TGB
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M25P40-VMP6TGB

Cell Type
NOR
Density
4Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 85C
Package Type
MLP EP
Program/erase Volt (typ)
2.3 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
512K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P40-VMP6TGB
Manufacturer:
MICRON
Quantity:
14 500
Part Number:
M25P40-VMP6TGB
Manufacturer:
MICRON
Quantity:
202
Part Number:
M25P40-VMP6TGB
Manufacturer:
ST
0
Part Number:
M25P40-VMP6TGB
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
M25P40-VMP6TGBTQ
Manufacturer:
JRC
Quantity:
888
Part Number:
M25P40-VMP6TGBTQ
Manufacturer:
STM
Quantity:
11 980
Part Number:
M25P40-VMP6TGBTQ
Manufacturer:
ST
Quantity:
20 000
40/61
Table 15.
1. This is preliminary data.
Table 16.
1. 110 nm technology devices are identified by process identification digit "4" in the device marking and
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
Symbol
Symbol
t
I
I
I
I
I
I
I
V
V
PP
V
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
V
process letter "B" in the part number
obtained with one sequence including all the bytes versus several sequences of only a few bytes
(1 ≤ n ≤ 256).
t
t
I
LO
t
OH
LI
OL
SE
BE
IH
W
IL
(2)
Input leakage current
Output leakage current
Standby current
Deep Power-down current
Operating current (READ)
Operating current (PP)
Operating current (WRSR)
Operating current (SE)
Operating current (BE)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Instruction times, process technology 110 nm
Alt.
DC characteristics (device grade 3)
Parameter
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Sector Erase cycle time
Bulk Erase cycle time
Test conditions specified in
.
Parameter
C = 0.1V
C = 0.1V
Test condition (in addition to
S = V
S = V
and 75 MHz, Q = open
and 33 MHz, Q = open
those in
CC
CC
CC
CC
I
OH
I
OL
, V
, V
S = V
S = V
S = V
S = V
/ 0.9.V
/ 0.9.V
= –100 µA
= 1.6 mA
Table 10
IN
IN
Table
= V
= V
CC
CC
CC
CC
CC
CC
SS
SS
at 25 MHz
at 20 MHz
10)
or V
or V
and
Min.
CC
CC
Table 18
(1)
int (n/8) ×
0.025
V
Typ.
0.7V
1.3
0.8
0.6
4.5
Min
CC
– 0.5
–0.2
(2)
(1)
CC
Max.
V
0.3V
15
10
Max
5
3
CC
100
± 2
± 2
0.4
50
15
15
15
15
8
4
+0.4
(1)
CC
Unit
ms
ms
Unit
s
s
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V

Related parts for M25P40-VMP6TGB