IRFB812PBF International Rectifier, IRFB812PBF Datasheet - Page 7

• Manufacturer Part Number: IRFB812PBF
• Description: MOSFET Power Gen 10.7 FredFet 500V 1.5Ohm
• Manufacturer: International Rectifier

Specifications of IRFB812PBF

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 78 W
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 13.3 nC
• Lead Free Status / Rohs Status: Details

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Fig 15a. Switching Time Test Circuit
D.U.T
≤ 0.1
≤ 1
ƒ
+
-
•
•
•
•
SD
Fig 16.
•
•
•
-
„
G
+
HEXFET
+
-
+
-
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
90%
V
10%
V
DS
GS
Fig 15b. Switching Time Waveforms
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
t
DS
d(on)
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
t
r
for N-Channel
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
t
d(off)
D =
Period
P.W.
t
f
V
V
I
SD
GS
DD
=10V
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