IRFB812PBF International Rectifier, IRFB812PBF Datasheet - Page 6

• Manufacturer Part Number: IRFB812PBF
• Description: MOSFET Power Gen 10.7 FredFet 500V 1.5Ohm
• Manufacturer: International Rectifier

Specifications of IRFB812PBF

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 78 W
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 13.3 nC
• Lead Free Status / Rohs Status: Details

Fig 13a. Unclamped Inductive Test Circuit
Fig 14a. Gate Charge Test Circuit
0
6
Fig 12. Maximum Safe Operating Area
0.01
100
0.1
10
1
1
R G
20V
V DS
Tc = 25°C
Tj = 150°C
Single Pulse
t p
V DS , Drain-toSource Voltage (V)
1K
I AS
D.U.T
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0.01 Ω
10
L
S
DUT
L
1msec
15V
100
10msec
100μsec
DRIVER
DC
+
-
VCC
V DD
A
1000
700
600
500
400
300
200
100
Fig 13b. Unclamped Inductive Waveforms
0
Fig 13. Maximum Avalanche Energy
25
I
AS
Starting T J , Junction Temperature (°C)
Fig 14b. Gate Charge Waveform
Vgs(th)
Qgs1 Qgs2
Vds
50
vs. Drain Current
t p
75
Qgd
100
Qgodr
V
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TOP
BOTTOM
(BR)DSS
125
0.7A
0.4A
I D
1.8A
Vgs
Id
150