IRFB812PBF International Rectifier, IRFB812PBF Datasheet - Page 3

• Manufacturer Part Number: IRFB812PBF
• Description: MOSFET Power Gen 10.7 FredFet 500V 1.5Ohm
• Manufacturer: International Rectifier

Specifications of IRFB812PBF

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 78 W
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 13.3 nC
• Lead Free Status / Rohs Status: Details

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Fig 3. Typical Transfer Characteristics
0.01
100
Fig 1. Typical Output Characteristics
100
0.1
0.1
10
10
1
1
0.1
4
V DS = 50V
≤60μs PULSE WIDTH
TOP
BOTTOM
T J = 150°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
5.3V
5
VGS
15V
10V
6.2V
5.9V
5.8V
5.6V
5.5V
5.3V
1
≤60μs PULSE WIDTH
Tj = 25°C
6
T J = 25°C
10
7
100
8
100
0.1
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
1
TOP
BOTTOM
I D = 3.6A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Vs. Temperature
VGS
15V
10V
6.2V
5.9V
5.8V
5.6V
5.5V
5.3V
20 40 60 80 100 120 140 160
≤ 60μs PULSE WIDTH
Tj = 150°C
10
5.3V
3
100