KMA199E.115 NXP Semiconductors, KMA199E.115 Datasheet - Page 24

• Manufacturer Part Number: KMA199E.115
• Manufacturer: NXP Semiconductors

Specifications of KMA199E.115

• Operating Temperature (min): -40C
• Operating Supply Voltage (typ): 5V
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
14. Electromagnetic compatibility
KMA199E_1
Product data sheet
14.1.1 Conducted radio disturbance
14.1.2 Radiated radio disturbance
14.2.1 Absorber lined shielded enclosure
14.2.2 Bulk-current injection
14.2.3 Strip line
14.1 Emission (CISPR 25)
14.2 Radiated disturbances (ISO 11452-2, ISO 11452-4 and ISO 11452-5)
EMC is achieved by the KMA199E.
Tests according to CISPR 25 were fulfilled.
Test of the device according to CISPR 25, chapter 11 (artificial network).
Class: 5.
Test of the device according to CISPR 25, chapter 13 (anechoic chamber -
component/module).
Class: 5 (without addition of 6 dB in FM band).
The common understanding of the requested function is that an effect is tolerated as
described in
mode, the Radio Frequency (RF) noise will occur on the signal and supply line.
Table 24.
Tests according to ISO 11452-2 were fulfilled.
Test levels:
Modulation: Continuous Wave (CW); AM: 1 kHz, 80 %.
State: A.
Tests according to ISO 11452-4 were fulfilled.
Test level: 200 mA with C
State: A.
Tests according to ISO 11452-5 were fulfilled.
Parameter
Variation of output signal in analog
output mode
> 200 V/m 200 MHz to 400 MHz (step 10 MHz)
> 200 V/m 400 MHz to 1000 MHz (step 25 MHz)
> 200 V/m 1 GHz to 10 GHz (step 100 MHz)
Failure condition for radiated disturbances
Table 24
Rev. 01 — 18 October 2007
during the disturbance. If the KMA199E operates in operation
L
= 1 nF.
Comment
value measured relative to the
output at test start
Programmable angle sensor
Min
-
KMA199E
© NXP B.V. 2007. All rights reserved.
Max
0.9
Unit
%V
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