IRFI1010N International Rectifier, IRFI1010N Datasheet - Page 7

• Manufacturer Part Number: IRFI1010N
• Description: Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220 Full-Pak
• Manufacturer: International Rectifier

Specifications of IRFI1010N

• Package: 3TO-220 Full-Pak
• Channel Mode: Enhancement
• Channel Type: N
• Typical Fall Time: 46 ns
• Typical Rise Time: 66 ns
• Typical Turn-off Delay Time: 40 ns
• Typical Turn-on Delay Time: 11 ns
• Maximum Continuous Drain Current: 49 A
• Maximum Drain Source Voltage: 55 V
• Maximum Gate Source Voltage: ±20 V

Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
= 5V for Logic Level Devices
P.W.
SD
Fig 14. For N-Channel HEXFETS
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Current Transformer
Low Stray Inductance
Ground Plane
Low Leakage Inductance
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
IRFI1010N