IRFI1010N International Rectifier, IRFI1010N Datasheet - Page 2

• Manufacturer Part Number: IRFI1010N
• Description: Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220 Full-Pak
• Manufacturer: International Rectifier

Specifications of IRFI1010N

• Package: 3TO-220 Full-Pak
• Channel Mode: Enhancement
• Channel Type: N
• Typical Fall Time: 46 ns
• Typical Rise Time: 66 ns
• Typical Turn-off Delay Time: 40 ns
• Typical Turn-on Delay Time: 11 ns
• Maximum Continuous Drain Current: 49 A
• Maximum Drain Source Voltage: 55 V
• Maximum Gate Source Voltage: ±20 V

IRFI1010N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
L
L
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
V
fs
D
S
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
(BR)DSS
V
I
Repetitive rating; pulse width limited by
T
R
SD
max. junction temperature. ( See fig. 11 )
DD
J
G
= 25 , I
= 25V, starting T
175°C
43A, di/dt
/ T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
AS
= 43A. (See Figure 12)
260A/µs, V
J
= 25°C, L = 390µH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
55
30
–––
–––
–––
–––
–––
–––
Uses IRF1010N data and test conditions
Pulse width
t=60s, ƒ=60Hz
2900 –––
0.06
–––
––– 0.012
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
880
330
–––
–––
–––
240
4.5
11
66
40
46
12
7.5
81
–––
–––
–––
–––
100
–––
–––
–––
–––
250
130
–––
–––
–––
–––
290
120
370
4.0
1.3
25
23
53
49
300µs; duty cycle
V/°C
nH
µA
nA
nC
ns
pF
nC
ns
A
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
I
R
R
Between lead,
6mm (0.25in.)
from package
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 43A
= 43A
= 25°C, I
= 25°C, I
= 0.62
= 3.6
= 25V, I
= 44V
= 28V
= 0V
= 25V
= 0V, I
= 10V, I
= V
= 55V, V
= 44V, V
= 20V
= -20V
= 10V, See Fig. 6 and 13
GS
2%.
, I
D
S
F
D
D
D
See Fig. 10
Conditions
= 250µA
GS
GS
Conditions
= 43A
= 26A, V
= 43A
= 250µA
= 26A
= 0V
= 0V, T
D
= 1mA
GS
J
= 150°C
G
= 0V
G
D
S
S
D