IRFI1010N International Rectifier, IRFI1010N Datasheet
IRFI1010N
Specifications of IRFI1010N
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IRFI1010N Summary of contents
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... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance R Junction-to-Case JC R Junction-to-Ambient JA G Parameter @ 10V GS @ 10V GS Parameter PD - 9.1373A IRFI1010N ® HEXFET Power MOSFET 55V DSS R = 0.012 DS(on 49A D S TO-220 FULLPAK Max 290 58 0.38 ± ...
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... IRFI1010N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... D rain-to-S ource V oltage ( Fig 1. Typical Output Characteristics ° ° µ te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics 1000 100 = IRFI1010N VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 100 4 .5V 20 µ IDTH 5° 0 Drain-to-Source V oltage ( Fig 2. Typical Output Characteristics ...
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... IRFI1010N 5000 4000 3000 2000 1000 Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 5° 25° ource-to-Drain Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage RTE 100 TES Total Gate Charge ( Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 OPE R ATIO LIMITE S(o n) 100 ...
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... RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit V 90% 125 150 175 10% ° Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRFI1010N D.U. 10V Pulse Width µs Duty Factor d(on) r ...
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... IRFI1010N 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 1000 15 V 800 600 + 400 200 V ( 100 125 Starting T , Junction T emperature (°C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D ...
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... Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Current di/dt Diode Recovery dv/dt Forward Drop 5% IRFI1010N + =10V ...
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... IRFI1010N Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417 ) 10.40 (.409 ) (.630 (.622 (.540 (.530) 1.40 (. 1.05 (. (.100) 2X Part Marking Information TO-220 Fullpak 010 E XAM PLE : T HIS IRF I840G ITH AS SE MBLY B1M LOT CODE E401 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...