STD12NE06 STMicroelectronics, STD12NE06 Datasheet - Page 3

• Manufacturer Part Number: STD12NE06
• Description: MOSFET Power RO 511-STP16NF06
• Manufacturer: STMicroelectronics

Specifications of STD12NE06

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 12 A
• Power Dissipation: 35 W
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Lead Free Status / Rohs Status: No

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbo l
Symbo l
Symbo l
I
V
t
SDM
t
r (Voff)
SD
I
Q
Q
d(on)
RRM
I
Q
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
g
rr
( )
( )
Turn-on Time
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
G
DD
DD
G
DD
= 4.7
= 4.7
= 12 A
= 12 A
= 30 V
= 48 V
= 40 V
= 30 V
Test Con ditions
Test Con ditions
Test Con ditions
V
I
GS
D
= 12 A V
= 0
Thermal Impedance
di/dt = 100 A/ s
T
j
V
V
= 150
GS
GS
GS
I
I
D
D
= 10 V
= 6 A
= 10 V
= 12 A
= 10 V
o
C
Min.
Min.
Min.
Typ.
Typ.
Typ.
0.21
10
35
20
18
30
70
5
7
7
6
Max.
Max.
Max.
STD12NE06
1.5
15
50
30
10
25
45
12
48
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/10