STD12NE06 STMicroelectronics, STD12NE06 Datasheet - Page 2

• Manufacturer Part Number: STD12NE06
• Description: MOSFET Power RO 511-STP16NF06
• Manufacturer: STMicroelectronics

Specifications of STD12NE06

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 12 A
• Power Dissipation: 35 W
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Lead Free Status / Rohs Status: No

STD12NE06
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/10
V
Symbo l
Symbo l
Symbo l
Symbo l
R
R
R
R
V
g
(BR)DSS
I
thj -case
thc-sink
C
thj -amb
I
I
E
DS(on)
C
C
GS(th)
D(o n)
f s
I
GSS
DSS
T
AR
os s
AS
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature F or Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
AR
Parameter
max)
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= 10 V
= Max Rating
= Max Rating
=
= 10V I
> I
> I
case
DD
D(o n)
D(o n)
GS
= 25 V)
20 V
= 25
Test Con ditions
Test Con ditions
Test Con ditions
x R
x R
I
D
D
f = 1 MHz
V
o
= 250 A
= 6 A
DS(on )ma x
DS(on )ma x
C unless otherwise specified)
GS
= 0
T
V
I
c
GS
D
= 100
=6 A
= 0
Max
Max
T yp
o
C
Min.
Min.
Min.
60
12
2
Max Value
Typ.
Typ.
Typ.
0.08
100
275
760
100
4.3
1.5
12
45
30
3
6
Max.
Max.
Max.
1000
0.10
140
10
45
100
1
4
o
o
o
Unit
Unit
Unit
Unit
C/W
C/W
C/W
mJ
nA
pF
pF
pF
o
V
V
A
S
A
C
A
A