SI7540DP-T1 Vishay, SI7540DP-T1 Datasheet - Page 8

• Manufacturer Part Number: SI7540DP-T1
• Description: MOSFET Small Signal 12V 11.8/8.9A 1.4W
• Manufacturer: Vishay

Specifications of SI7540DP-T1

• Configuration: Single Dual Drain
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si7540DP
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71911.
www.vishay.com
8
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
0.02
10
-3
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
-1
DM
JM
- T
t
A
1
S09-0227-Rev. F, 09-Feb-09
= P
t
Document Number: 71911
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 60 °C/W
600
1