SI7540DP-T1 Vishay, SI7540DP-T1 Datasheet - Page 4

• Manufacturer Part Number: SI7540DP-T1
• Description: MOSFET Small Signal 12V 11.8/8.9A 1.4W
• Manufacturer: Vishay

Specifications of SI7540DP-T1

• Configuration: Single Dual Drain
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si7540DP
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
20
10
0.4
0.2
0.0
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
T
- Temperature (°C)
25
J
= 150 °C
50
0.6
I
D
= 250 μA
75
0.8
0.01
100
0.1
10
T
100
Limited by R
1
0.1
J
= 25 °C
Safe Operating Area, Junction-to-Ambient
Limited
1.0
I
125
D(on)
Single Pulse
T
A
DS(on)
V
= 25 °C
150
DS
1.2
- Drain-to-Source Voltage (V)
BVDSS Limited
1
I
DM
10
0.05
0.04
0.03
0.02
0.01
0.00
40
32
24
16
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
8
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
I
D
0.1
100
= 5 A
1
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
2
1
Time (s)
S09-0227-Rev. F, 09-Feb-09
I
D
Document Number: 71911
= 11.8 A
3
10
4
100
600
5