SI7540DP-T1 Vishay, SI7540DP-T1 Datasheet - Page 5

• Manufacturer Part Number: SI7540DP-T1
• Description: MOSFET Small Signal 12V 11.8/8.9A 1.4W
• Manufacturer: Vishay

Specifications of SI7540DP-T1

• Configuration: Single Dual Drain
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71911
S09-0227-Rev. F, 09-Feb-09
0.01
0.1
0.01
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
0.02
10
0.05
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
-1
P
DM
JM
- T
t
A
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
100
thJA
t
t
Si7540DP
1
2
(t)
= 60 °C/W
www.vishay.com
600
1
5