CY62157DV18LL-70BVI Cypress Semiconductor Corp, CY62157DV18LL-70BVI Datasheet

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CY62157DV18LL-70BVI

Manufacturer Part Number
CY62157DV18LL-70BVI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62157DV18LL-70BVI

Lead Free Status / Rohs Status
Not Compliant

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Cypress Semiconductor Corporation
Document #: 38-05126 Rev. *B
Features
Functional Description
The CY62157DV18 is a high-performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 99% when addresses are not
toggling. The device can be put into standby mode reducing
Note:
1.
Logic Block Diagram
• Very high speed: 55 ns and 70 ns
• Voltage range: 1.65V to 1.95V
• Pin compatible with CY62157CV18
• Ultra-low active power
• Ultra-low standby power
• Easy memory expansion with CE
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA
features
— Typical active current: 1 mA @ f = 1 MHz
— Typical active current: 10 mA @ f = f
For best practice recommendations, please refer to the Cypress application note System Design Guidelines on http://www.cypress.com.
A
A
A
A
A
A
A
A
A
A
A
10
9
8
7
6
5
4
3
2
1
0
[1]
Power - down
Circuit
COLUMN DECODER
DATA IN DRIVERS
1
2048 x 256 x 16
, CE
RAM ARRAY
512K x 16
2
MAX
, and OE
3901 North First Street
(MoBL
®
) in
power consumption by more than 99% when deselected Chip
Enable 1 (CE
BHE and BLE are HIGH. The input/output pins (I/O
I/O
Chip Enable 1 (CE
outputs are disabled (OE HIGH), both Byte High Enable and
Byte Low Enable are disabled (BHE, BLE HIGH) or during a
write operation (Chip Enable 1 (CE
(CE
Writing to the device is accomplished by taking Chip Enable 1
(CE
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O
specified on the address pins (A
Enable (BHE) is LOW, then data from I/O pins (I/O
I/O
(A
Reading from the device is accomplished by taking Chip
Enable 1 (CE
Output Enable (OE) LOW while forcing the Write Enable (WE)
HIGH. If Byte Low Enable (BLE) is LOW, then data from the
memory location specified by the address pins will appear on
I/O
memory will appear on I/O
back of this data sheet for a complete description of read and
write modes.
BHE
BLE
0
15
15
0
2
1
through A
to I/O
) HIGH and WE LOW).
) LOW and Chip Enable 2 (CE
) are placed in a high-impedance state when: deselected
) is written into the location specified on the address pins
8M (512K x 16) Static RAM
7
. If Byte High Enable (BHE) is LOW, then data from
18
1
1
San Jose
) HIGH or Chip Enable 2 (CE
I/O
I/O
) LOW and Chip Enable 2 (CE
).
0
8
0
–I/O
–I/O
1
through I/O
BHE
WE
OE
BLE
) HIGH or Chip Enable 2 (CE
7
15
,
CA 95134
8
to I/O
CE
CE
7
2
), is written into the location
0
1
15
1
through A
2
. See the truth table at the
) LOW and Chip Enable 2
) HIGH and Write Enable
Revised March 17, 2003
CE
CE
2
1
CY62157DV18
18
2
408-943-2600
) LOW or both
). If Byte High
2
) HIGH and
MoBL2
0
8
2
through
) LOW,
through

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CY62157DV18LL-70BVI Summary of contents

Page 1

... Power - down Circuit Note: 1. For best practice recommendations, please refer to the Cypress application note System Design Guidelines on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05126 Rev (512K x 16) Static RAM power consumption by more than 99% when deselected Chip Enable 1 (CE BHE and BLE are HIGH. The input/output pins (I/O ...

Page 2

Pin Configuration Notes pins are not connected to the die. 3. DNU pins are to be connected left open. SS Document #: 38-05126 Rev. *B FBGA T op View ...

Page 3

... Supply Voltage to Ground Potential ......................... –0. Voltage Applied to Outputs [4] in High-Z State ....................................–0. Product Portfolio V Range(V) CC Product Min. Typ. CY62157DV18L 1.65 1.8 CY62157DV18LL 1.65 1.8 DC Electrical Characteristics Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage ...

Page 4

Thermal Resistance Parameter Description Thermal Resistance (Junction to JA [6] Ambient) Thermal Resistance (Junction to JC [6] Case) AC Test Loads and Waveforms OUTPUT INCLUDING JIG AND SCOPE Equivalent to: Parameters R1 ...

Page 5

Switching Characteristics (Over the Operating Range) Parameter Description Read Cycle t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW or CE ACE LOW to ...

Page 6

Switching Waveforms (continued) Read Cycle No. 2 (OE Controlled) ADDRESS BHE BLE t LZBE OE HIGH IMPEDANCE DATA OUT t LZCE SUPPLY CURRENT Write Cycle No. 1 (WE Controlled) ADDRESS CE ...

Page 7

Switching Waveforms (continued) Write Cycle No Controlled ADDRESS BHE /BLE OE DATA I/O DON’T CARE Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS ...

Page 8

... Ordering Information Speed (ns) Ordering Code 55 CY62157DV18L-55BVI CY62157DV18LL-55BVI 70 CY62157DV18L-70BVI CY62157DV18LL-70BVI Document #: 38-05126 Rev. *B [19 SCE PWE DATA BLE Input / Outputs X X High High High Data Out ( I/O0 – I/O15 Data Out ( I/O0 – I/O7); High Z (I/O8 – I/O15 High Z (I/O0 – I/O7); ...

Page 9

... Document #: 38-05126 Rev. *B © Cypress Semiconductor Corporation, 2003. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

Page 10

Document History Page Document Title: CY62157DV18 MoBL2 Document Number: 38-05126 Issue REV. ECN NO. Date ** 112603 03/01/02 *A 116601 06/14/02 *B 124694 03/18/03 Document #: 38-05126 Rev (512K x 16) Static RAM Orig. of Change GAV New ...

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