MT46V32M16FN-6 Micron Technology Inc, MT46V32M16FN-6 Datasheet - Page 83

MT46V32M16FN-6

Manufacturer Part Number
MT46V32M16FN-6
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V32M16FN-6

Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
FBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
195mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant

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Figure 48:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
BA0, BA1
Address
DQS
DQ 5
CK#
CKE
A10
DM
CK
t
t
IS
IS
NOP 1
Bank WRITE – Without Auto Precharge
T0
t
t
IH
IH
Notes:
t
t
Bank x
IS
IS
Row
Row
ACT
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 50 on page 85 for detailed DQ timing.
t
t
IH
IH
t
times.
CK
t
t
RCD
RAS
NOP 1
T2
t
CH
t
CL
WRITE 2
t
Bank x
Col n
IS
3
T3
t
t
DQSS (NOM)
IH
t
WPRES
t DS
83
t
WPRE
NOP 1
T4
DI
b
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP 1
T5
512Mb: x4, x8, x16 DDR SDRAM
t
DQSH
T5n
t
WPST
NOP 1
T6
Transitioning Data
©2000 Micron Technology, Inc. All rights reserved.
t
NOP 1
WR
T7
Operations
One bank
All banks
Don’t Care
Bank x 4
T8
PRE
t
RP

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