M29W160ET7AZA6F Micron Technology Inc, M29W160ET7AZA6F Datasheet - Page 16

• Manufacturer Part Number: M29W160ET7AZA6F
• Manufacturer: Micron Technology Inc

Specifications of M29W160ET7AZA6F

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TFBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

M29W160ET, M29W160EB
Table 4. Commands, 16-bit mode, BYTE = V
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
16/42
Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/
Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional
Bus Write Operations until Timeout Bit is set.
Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program com-
mands on non-erasing blocks as normal.
Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Pro-
gram/Erase Controller completes and the memory returns to Read Mode.
CFI Query. Command is valid when device is ready to read array data or when device is in Auto Select mode.
Command
6+
1
3
3
4
3
2
2
6
1
1
1
Addr
555
555
555
555
555
555
55
X
X
X
X
X
1st
Data Addr Data Addr
IL
AA
AA
AA
AA
AA
AA
F0
A0
B0
90
30
98
or DQ15 when BYTE is V
2AA
2AA
2AA
2AA
2AA
2AA
PA
X
2nd
IH
PD
55
55
55
55
00
55
55
555
555
555
555
555
X
Bus Write Operations
IH
.
3rd
Data Addr Data Addr
F0
A0
90
20
80
80
555
555
PA
4th
PD
AA
AA
2AA
2AA
5th
Data Addr Data
55
55
555
BA
6th
10
30