PSMN8R0-30YL,115 NXP Semiconductors, PSMN8R0-30YL,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN8R0-30YL,115
• Description: MOSFET Power N-Ch 30V TrenchMOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 8 ns
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 29 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064947115

NXP Semiconductors
6. Characteristics
Table 6.
PSMN8R0-30YLC
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
f = 1 MHz
I
see
I
see
I
I
see
I
see
V
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 10 mA; V
= 1 mA; V
= 15 A; V
= 15 A; V
= 0 A; V
= 15 A; V
= 15 A; V
Figure 10
Figure 11
Figure 11
Figure 12
Figure
Figure 12
Figure
Figure
Figure
Figure
Figure 15
= 30 V; V
= 30 V; V
= 15 V; V
= 16 V; V
= -16 V; V
= 4.5 V; I
= 4.5 V; I
= 10 V; I
= 10 V; I
Rev. 2 — 1 September 2011
DS
12; see
12; see
14; see
14; see
14; see
DS
DS
DS
DS
DS
DS
D
D
D
D
= 0 V; V
DS
GS
GS
GS
DS
GS
GS
DS
= 15 A; T
= 15 A; T
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; see
= V
= V
= 15 A; T
= 15 A; T
Figure 16
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
Figure 13
Figure 13
Figure 15
Figure 15
Figure 15
GS
; T
; T
GS
; T
j
j
j
j
GS
GS
GS
= 10 V
j
j
j
j
j
= 25 °C;
= -55 °C;
= 25 °C;
= 150 °C;
j
j
j
j
= 25 °C;
= 150 °C;
= 25 °C
= 150 °C
= 25 °C
= 150 °C;
= 25 °C
= -55 °C
= 25 °C
Figure
= 10 V;
= 4.5 V;
= 4.5 V;
14;
PSMN8R0-30YLC
Min
30
27
1.05
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.59
-
-
-
-
-
-
8.5
-
6.7
-
2.2
15
7
13
2.1
1.5
0.6
2.3
2.6
848
207
70
© NXP B.V. 2011. All rights reserved.
Max
-
-
1.95
-
2.25
1
100
100
100
10
16.6
7.9
13.2
4.4
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
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