PSMN8R0-30YL,115 NXP Semiconductors, PSMN8R0-30YL,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN8R0-30YL,115
• Description: MOSFET Power N-Ch 30V TrenchMOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 8 ns
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 29 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064947115

NXP Semiconductors
PSMN8R0-30YLC
Product data sheet
Fig 16. Input, output and reverse transfer capacitances
Fig 18. Reverse recovery timing definition
(pF)
10
C
10
10
10
4
3
2
10
as a function of drain-source voltage;
typical values
-1
1
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
10
(A)
I
D
0
V
C
All information provided in this document is subject to legal disclaimers.
C
C
DS
003a a g163
os s
is s
rs s
(V)
10
Rev. 2 — 1 September 2011
2
t
a
Fig 17. Source current as a function of source-drain
t
rr
(A)
I
S
80
60
40
20
t
0
b
voltage; typical values
0
I
RM
003a a f 444
0.25 I
t (s )
R M
0.3
T
PSMN8R0-30YLC
j
= 150 C
0.6
0.9
T
© NXP B.V. 2011. All rights reserved.
j
= 25 C
003a a g164
V
S D
(V)
1.2
10 of 15