S29GL128S10TFI010 Spansion Inc., S29GL128S10TFI010 Datasheet - Page 3

• Manufacturer Part Number: S29GL128S10TFI010
• Description: Flash 128 MBIT 3V 100NS PAGE MODE FLASH
• Manufacturer: Spansion Inc.

Specifications of S29GL128S10TFI010

• Data Bus Width: 16 bit
• Memory Type: Flash
• Memory Size: 128 Mbit
• Architecture: Uniform
• Timing Type: Asynchronous
• Interface Type: CFI
• Access Time: 100 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 100 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-56
• Lead Free Status / Rohs Status: Compliant

General Description
Distinctive Characteristics
Performance Summary
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.
The Spansion
devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature
a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective
programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications
that require higher density, better performance and lower power consumption.
 65 nm MirrorBit Technology
 Single supply (V
 Versatile I/O
 x16 data bus
 Asynchronous 32-byte Page read
 512-byte Programming Buffer
 Single word and multiple program on same word options
 Sector Erase
 Suspend and Resume commands for Program and Erase
GL-S MirrorBit
Non-Volatile Memory Family
S29GL01GS
S29GL512S
S29GL256S
S29GL128S
CMOS 3.0 Volt Core with Versatile I/O
Data Sheet (Advance Information)
– Wide I/O voltage range (V
– Automatic ECC protection applied on each 32-byte Page
– Programming in Page multiples, up to a maximum of 512-bytes
– Uniform 128-kbyte sectors
operations
®
™
S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These
Feature
Publication Number S29GL_128S_01GS_00
CC
) for read / program / erase (2.7V to 3.6V)
Density
128 Mb
256 Mb
512 Mb
1 Gbit
512 Mbit
256 Mbit
128 Mbit
1 Gb
IO
): 1.65V to V
®
CC
Eclipse
Voltage Range
VersatileIO V
VersatileIO V
VersatileIO V
VersatileIO V
Full V
Full V
Full V
Full V
CC
CC
CC
CC
(128 Mbyte)
(64 Mbyte)
(32 Mbyte)
(16 Mbyte)
= V
= V
= V
= V
IO
IO
IO
IO
IO
IO
IO
IO
™
Random Access
™
Time (t
Maximum Read Access Times
Flash
100
100
100
110
100
110
90
90
ACC
Revision 01
 Status Register, Data Polling, and Ready/Busy pin methods
 Advanced Sector Protection (ASP)
 Separate 1024-byte One Time Program (OTP) array with two
 Common Flash Interface (CFI) parameter table
 Industrial temperature range (-40°C to +85°C)
 100,000 erase cycles for any sector typical
 20-year data retention typical
 Packaging Options
)
to determine device status
– Volatile and non-volatile protection methods for each sector
lockable regions
– 56-pin TSOP
– 64-ball LAE Fortified BGA, 9 mm x 9 mm
– Known Good Wafer (KGW) 725 µm thickness
Page Access Time
(t
PACC
15
25
15
25
15
25
15
25
Issue Date February 11, 2011
)
CE# Access Time
(t
100
100
100
110
100
110
90
90
CE
)
OE# Access Time
(t
25
35
25
35
25
35
25
35
OE
)