NCV3030ADR2G ON Semiconductor, NCV3030ADR2G Datasheet - Page 5

• Manufacturer Part Number: NCV3030ADR2G
• Description: IC PWM CTLR BUCK SYNC 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NCV3030ADR2G

• Pwm Type: Voltage Mode
• Number Of Outputs: 1
• Frequency - Max: 1.44MHz
• Duty Cycle: 84%
• Voltage - Supply: 4.7 V ~ 28 V
• Buck: Yes
• Boost: No
• Flyback: No
• Inverting: No
• Doubler: No
• Divider: No
• Cuk: No
• Isolated: No
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (
GATE DRIVERS AND BOOST CLAMP
THERMAL SHUTDOWN
5. Guaranteed by design.
6. The voltage sensed across the high side MOSFET during conduction.
7. This assumes 100 pF capacitance to ground on the COMP Pin and a typical internal R
8. This is not a protection feature.
HSDRV Pullup Resistance
HSDRV Pulldown Resistance
LSDRV Pullup Resistance
LSDRV Pulldown Resistance
HSDRV Falling to LSDRV Rising
Delay
LSDRV Falling to HSDRV Rising
Delay
Boost Clamp Voltage
Thermal Shutdown
Hysteresis
Characteristic
−40°C < T
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
= 12 V, V
= 12 V, V
= 8 V, V
= 8 V, V
= 8 V, V
= 8 V, V
100 mA out of HSDR pin
100 mA out of LSDR pin
V
100 mA into HSDR pin
100 mA into LSDR pin
J
CC
< +125°C, V
(Notes 5 and 8)
(Notes 5 and 8)
= 12 V, V
SW
SW
Conditions
BST
BST
BST
BST
http://onsemi.com
= GND, V
= GND, V
= 7.5 V, V
= 7.5 V, V
= 7.5 V, V
= 7.5 V, V
SW
CC
5
= GND
= 12 V, for min/max values unless otherwise noted)
COMP
COMP
SW
SW
SW
SW
= GND
= GND
= GND
= GND
= 1.3 V
= 1.3 V
o
of > 10 MW.
Min
5.0
2.0
3.0
1.0
5.5
50
60
−
−
Typ
165
5.0
8.9
3.0
7.5
11
80
80
20
Max
11.5
110
120
6.0
9.6
20
16
−
−
Unit
ns
ns
°C
°C
W
W
W
W
V