PSMN2R0-60ES,127 NXP Semiconductors, PSMN2R0-60ES,127 Datasheet - Page 15

• Manufacturer Part Number: PSMN2R0-60ES,127
• Description: MOSFET Power N-Ch 60V 2.2 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R0-60ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 137 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 9997pF @ 30V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065162127

NXP Semiconductors
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
PSMN2R0-60ES
Document identifier: PSMN2R0-60ES
Date of release: 19 April 2011
All rights reserved.