PSMN2R0-60ES,127 NXP Semiconductors, PSMN2R0-60ES,127 Datasheet - Page 12

• Manufacturer Part Number: PSMN2R0-60ES,127
• Description: MOSFET Power N-Ch 60V 2.2 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R0-60ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 137 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 9997pF @ 30V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065162127

NXP Semiconductors
8. Revision history
Table 7.
PSMN2R0-60ES
Product data sheet
Document ID
PSMN2R0-60ES v.2
Modifications:
PSMN2R0-60ES v.1
Revision history
20110419
20110117
Release date
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 02 — 19 April 2011
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
Change notice
-
-
PSMN2R0-60ES
Supersedes
PSMN2R0-60ES v.1
-
© NXP B.V. 2011. All rights reserved.
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