PSMN2R0-60ES,127 NXP Semiconductors, PSMN2R0-60ES,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN2R0-60ES,127
• Description: MOSFET Power N-Ch 60V 2.2 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R0-60ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 137 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 9997pF @ 30V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065162127

NXP Semiconductors
PSMN2R0-60ES
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DS
= 12V
40
48V
30V
80
(A)
I
S
200
160
120
80
40
120
0
0
All information provided in this document is subject to legal disclaimers.
Q
003aaf748
G
(nC)
160
T
Rev. 02 — 19 April 2011
0.3
j
= 175 ° C
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
0.6
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
T
10
j
0.9
5
4
3
2
10
= 25 ° C
as a function of drain-source voltage; typical
values
-1
003aaf750
V
SD
(V)
1.2
1
PSMN2R0-60ES
10
© NXP B.V. 2011. All rights reserved.
V
003aaf749
DS
(V)
C
C
C
iss
oss
rss
10
2
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