IPA65R190E6 Infineon Technologies, IPA65R190E6 Datasheet - Page 7

• Manufacturer Part Number: IPA65R190E6
• Description: SP000863904_COOL MOS_TU_RO
• Manufacturer: Infineon Technologies

Specifications of IPA65R190E6

• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 66.0 A

Table 8
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Table 9
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Final Data Sheet
Gate charge characteristics
Reverse diode characteristics
Symbol
Q
Q
Q
V
Symbol
V
t
Q
I
rr
rrm
plateau
SD
gs
gd
g
rr
Min.
-
-
-
-
Min.
-
-
-
-
7
Typ.
8.9
38
73
5.5
Typ.
0.9
410
6.1
28
Values
Values
650V CoolMOS™ E6 Power Transistor
Max.
-
-
-
-
Max.
-
-
-
-
Unit
nC
V
Unit
V
ns
µC
A
Electrical characteristics
Note /
Test Condition
V
V
Note /
Test Condition
V
T
V
d
Rev. 2.0, 2011-05-13
i
j
DD
GS
GS
R
=25 °C
F
=400 V,
/d
=480 V,
=0 to 10 V
=0 V,
t
IPx65R190E6
=100 A/µs
I
F
I
=11 A,
F
I
=11 A,
D
=11 A,