IPA65R190E6 Infineon Technologies, IPA65R190E6 Datasheet - Page 11

• Manufacturer Part Number: IPA65R190E6
• Description: SP000863904_COOL MOS_TU_RO
• Manufacturer: Infineon Technologies

Specifications of IPA65R190E6

• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 66.0 A

Final Data Sheet
Table 16
Table 17
Typ. transfer characteristics
Avalanche energy
E
I
D
AS
=f(V
=f(T
GS
j
); I
); V
D
DS
=3.5 A; V
=20V
DD
=50 V
11
Typ. gate charge
V
Drain-source breakdown voltage
V
GS
BR(DSS)
=f(Q
650V CoolMOS™ E6 Power Transistor
=f(T
gate
), I
j
); I
D
=11 A pulsed
D
=1.0 mA
Electrical characteristics diagrams
Rev. 2.0, 2011-05-13
IPx65R190E6