IPA65R190E6 Infineon Technologies, IPA65R190E6 Datasheet - Page 4

• Manufacturer Part Number: IPA65R190E6
• Description: SP000863904_COOL MOS_TU_RO
• Manufacturer: Infineon Technologies

Specifications of IPA65R190E6

• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 66.0 A

2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation for
TO-220, TO-247, TO-262, TO-263
Power dissipation for
TO-220 FullPAK
Operating and storage temperature
Mounting torque
TO-220, TO-247
Mounting torque
TO-220 FullPAK
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
speed
1) Limited by
2) Pulse width
3) Identical low side and high side switch with identical
Final Data Sheet
T
j
= 25 °C, unless otherwise specified.
3)
Maximum ratings
Maximum ratings
T
j,max.
t
p
limited by
Maximum duty cycle D=0.75
2)
3)
2)
1)
T
j,max
Symbol
I
I
E
E
I
dv/dt
V
P
P
T
I
I
dv/dt
di
D
D,pulse
AR
S
S,pulse
j
AS
AR
GS
tot
tot
,T
f
/dt
stg
R
Min.
-
-
-
-
-
-
-20
-30
-
-
-55
-
-
-
-
G
4
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
650V CoolMOS™ E6 Power Transistor
20.2
12.8
66
485
0.73
3.5
50
20
30
151
34
150
60
50
17.5
66
15
500
Unit
A
A
mJ
A
V/ns
V
W
°C
Ncm M3 and M3.5 screws
A
A
V/ns
A/µs
Note / Test Condition
T
T
T
I
I
V
static
AC (f>1 Hz)
T
M2.5 screws
T
T
V
T
D
D
C
C
C
C
C
C
j
DS
DS
=3.5 A,V
=3.5 A,V
=25 °C
= 25 °C
= 100°C
=25 °C
=25 °C
=25 °C
=25 °C
=0...480 V
=0...400 V,I
Rev. 2.0, 2011-05-13
Maximum ratings
IPx65R190E6
DD
DD
=50 V
=50 V
SD

I
D
,