N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 122

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

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Figure 55. Bulk Erase instruction sequence DIO-SPI
Program/Erase Suspend
The Program/Erase Suspend instruction allows the controller to interrupt a Program or an
Erase instruction, in particular: Sector Erase and Dual Command Page Program can be
suspended and erased while Subsector Erase, Bulk Erase, Write Non Volatile Configuration
register, and Program OTP cannot be suspended.
Apart form the parallelizing of the instruction code on the two pins DQ0 and DQ1, the
instruction functionality is exactly the same as the Program/Erase Suspend (PES)
instruction of the Extended SPI protocol.
Figure 56. Program/Erase Suspend instruction sequence DIO-SPI
Program/Erase Resume
After a Program/Erase suspend instruction, a Program/Erase Resume instruction is
required to continue performing the suspended Program or Erase sequence.
Apart form the parallelizing of the instruction code on the two pins DQ0 and DQ1, the
instruction functionality is exactly the same as the Program/Erase Resume (PER)
S
C
DQ0
DQ1
S
C
DQ0
DQ1
0
Instruction
0
Instruction
1
Dual_Program_Erase_Suspend
1
2
2
3
Dual_Bulk_Erase
3
4