N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 121

no-image

N25Q128A11B1240E

Manufacturer Part Number
N25Q128A11B1240E
Description
Manufacturer
NUMONYX
Datasheet

Specifications of N25Q128A11B1240E

Cell Type
NOR
Density
128Mb
Access Time (max)
7ns
Interface Type
Serial (SPI)
Boot Type
Bottom
Address Bus
1b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
TBGA
Program/erase Volt (typ)
1.7 to 2/8.5 to 9.5V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
2V
Word Size
8b
Number Of Words
16M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
24
Lead Free Status / Rohs Status
Supplier Unconfirmed
9.2.9
9.2.10
DQ0
DQ1
C
S
Sector Erase (SE)
The Sector Erase (SE) instruction sets to '1' (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
Apart form the parallelizing of the instruction code and the address on the two pins DQ0 and
DQ1, the instruction functionality is exactly the same as the Sector Erase (SE) instruction of
the Extended SPI protocol, please refer to
details.
Figure 54. Sector Erase instruction sequence DIO-SPI
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to '1' (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed.
Apart form the parallelizing of the instruction code on the two pins DQ0 and DQ1, the
instruction functionality is exactly the same as the Bulk Erase (BE) instruction of the
Extended SPI protocol, please refer to
0
Instruction
1
2
3
23 21 19 17
22 20 18 16
4
5
6
Section 9.1.19: Bulk Erase (BE)
7
24-Bit Address
15 13 11 9
14 12 10 8
Section 9.1.18: Sector Erase (SE)
8
9 10 11
12 13 14 15
7
6
5
4
3
2
for further details.
1
0
Dual_Sector_Erase
for further
121/185

Related parts for N25Q128A11B1240E