MT48H16M32LFCM-8 IT:A Micron Technology Inc, MT48H16M32LFCM-8 IT:A Datasheet - Page 32

• Manufacturer Part Number: MT48H16M32LFCM-8 IT:A
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-8 IT:A

• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 9/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Figure 21:
Figure 22:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
Random WRITE Cycles
WRITE-to-READ
Notes:
Notes:
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same opera-
tion that would result from the same fixed-length burst with auto precharge. The disad-
vantage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length bursts.
COMMAND
1. Each WRITE command may be to any bank. DQM is LOW.
COMMAND
1. The WRITE command may be to any bank, and the READ command may be to any bank.
ADDRESS
ADDRESS
DQM is LOW. CL = 2 for illustration.
CLK
CLK
DQ
DQ
WRITE
BANK,
BANK,
COL n
WRITE
COL n
D
T0
D
T0
n
IN
n
IN
WRITE
BANK,
n + 1
COL a
NOP
T1
D
T1
D
IN
a
IN
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
BANK,
WRITE
COL x
BANK,
COL b
READ
T2
D
T2
x
IN
32
DON’T CARE
WRITE
BANK,
COL m
T3
T3
NOP
D
m
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
D
T4
OUT
b
DON’T CARE
NOP
b + 1
T5
D
OUT
©2005 Micron Technology, Inc. All rights reserved.
Operations