MT47H256M4HQ-3 IT:E TR Micron Technology Inc, MT47H256M4HQ-3 IT:E TR Datasheet - Page 25

• Manufacturer Part Number: MT47H256M4HQ-3 IT:E TR
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H256M4HQ-3 IT:E TR

• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Table 7: Thermal Impedance
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Die Revision
E
G
1
1
Package Substrate
60-ball
84-ball
60-ball
84-ball
Note:
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
Airflow = 0m/s
θ JA (°C/W)
56.7
40.2
52.9
38.4
66.5
49.2
60.2
44
Electrical Specifications – Absolute Ratings
Airflow = 1m/s
25
θ JA (°C/W)
42.1
32.8
41.3
49.6
40.4
44.5
35.7
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Airflow = 2m/s θ JB (°C/W) θ JC (°C/W)
1Gb: x4, x8, x16 DDR2 SDRAM
θ JA (°C/W)
36.8
29.9
35.7
28.9
43.1
36.4
39.3
32.8
© 2004 Micron Technology, Inc. All rights reserved.
22.7
22.1
21.6
21.5
30.3
26.1
26.1
30
2.5
2.5
5.9
5.6